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2 Mb Density Ferroelectric RAM with Serial Peripheral Interface designed for Data Logging of Mission Critical Data

2 Mb Density Ferroelectric RAM
2 Mb Density Ferroelectric RAM

Infineon Technologies LLC has announced the availability of a new radiation-hardened (rad-hard), serial interface Ferroelectric RAM (F-RAM) that is ideal for data logging of mission-critical data, telemetry storage, and command and control calibration data storage. This device delivers unsurpassed reliability and data retention and is more energy-efficient than non-volatile EEPROM and serial NOR Flash devices for space applications. It can be used for providing boot code storage solutions for microcontrollers, FPGAs and ASICs. Moreover, these rad-hard F-RAMs are also suitable for avionic and other applications that require military standard temperature grades reaching from -55°C to 125°C.


The 2 Mb density F-RAM with SPI is the first in its family of rad-hard non-volatile F-RAMs. These devices have virtually infinite endurance with no wear leveling, with 10 trillion read/write cycles and 120 years of data retention at 85°C, at an operating voltage range of 2.0 V to 3.6 V. The lowest operating current is 10 mA maximum, with an extreme low programming voltage of 2 V. Support for the industry-standard Serial Peripheral Interface (SPI) protocol improves ease-of-use and supports a smaller footprint and lower pin count. Additional features include a small footprint with 16-in ceramic SOP packaging. 



  • 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256K × 8

  • Fast serial peripheral interface (SPI)

  • Sophisticated write protection scheme

  • Device ID

  • Low power consumption (pre-/post 150krad TID radiation)

  • Low-voltage operation: VDD = 2.0 V to 3.6 V

  • Military temperature: –55 °C to +125 °C

  • 16-pin ceramic SOP package



  • Avionic applications
  • Space applications

Component Datasheet

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